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Datasheet-uri gasite :: 1351360Pagina: << | 15265 | 15266 | 15267 | 15268 | 15269 | 15270 | 15271 | 15272 | 15273 | 15274 | 15275 | >>
Nr.NumeDescriereProducator
610761KM416V4100BS-54M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 50nsSamsung Electronic
610762KM416V4100BS-64M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 60nsSamsung Electronic
610763KM416V4100BS-L454M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 45ns, de putere micăSamsung Electronic
610764KM416V4100BS-L54M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 50ns, de putere micăSamsung Electronic
610765KM416V4100BS-L64M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 60ns, de putere micăSamsung Electronic
610766KM416V4100C4M x 16bit CMOS Dynamic RAM with Fast Page ModeSamsung Electronic
610767KM416V4100CS-454M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 45nsSamsung Electronic
610768KM416V4100CS-54M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 50nsSamsung Electronic
610769KM416V4100CS-64M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 60nsSamsung Electronic
610770KM416V4100CS-L454M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 45ns, de putere micăSamsung Electronic
610771KM416V4100CS-L54M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 50ns, de putere micăSamsung Electronic
610772KM416V4100CS-L64M x 16bit CMOS RAM dinamic cu modul de start, rapid, sursa de alimentare 3.3V, 60ns, de putere micăSamsung Electronic
610773KM416V4104B4M x 16bit CMOS Dynamic RAM with Extended Data OutSamsung Electronic
610774KM416V4104BS-454M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 45nsSamsung Electronic
610775KM416V4104BS-54M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 50nsSamsung Electronic
610776KM416V4104BS-64M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 60nsSamsung Electronic
610777KM416V4104BSL-454M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 45ns, consum redus de energieSamsung Electronic
610778KM416V4104BSL-54M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 50ns, consum redus de energieSamsung Electronic
610779KM416V4104BSL-64M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 60ns, consum redus de energieSamsung Electronic
610780KM416V4104C4M x 16bit CMOS Dynamic RAM with Extended Data OutSamsung Electronic
610781KM416V4104CS-454M x 16bit CMOS Dynamic RAM with Extended Data OutSamsung Electronic
610782KM416V4104CS-504M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 50nsSamsung Electronic
610783KM416V4104CS-604M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 60nsSamsung Electronic
610784KM416V4104CS-L454M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 45ns, consum redus de energieSamsung Electronic
610785KM416V4104CS-L504M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 50ns, consum redus de energieSamsung Electronic
610786KM416V4104CS-L604M x 16bit CMOS RAM dinamic cu date extinse out, sursa de alimentare de 3.3V, 60ns, consum redus de energieSamsung Electronic
610787KM4170Low Cost, +2.7V & +5V, Rail-to-Rail I/O AmplifiersFairchild Semiconductor
610788KM4170IS5TR3Low Cost/ +2.7V & +5V/ Rail-to-Rail I/O AmplifiersFairchild Semiconductor
610789KM4170IT5TR3Low Cost/ +2.7V & +5V/ Rail-to-Rail I/O AmplifiersFairchild Semiconductor
610790KM418RD128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610791KM418RD16AC128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610792KM418RD16AD128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610793KM418RD16C128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610794KM418RD16D128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610795KM418RD2AC128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610796KM418RD2AD128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610797KM418RD2C128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610798KM418RD2D128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610799KM418RD32AC128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610800KM418RD32AD128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
Datasheet-uri gasite :: 1351360Pagina: << | 15265 | 15266 | 15267 | 15268 | 15269 | 15270 | 15271 | 15272 | 15273 | 15274 | 15275 | >>
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