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Datasheet-uri gasite :: 1351360Pagina: << | 15268 | 15269 | 15270 | 15271 | 15272 | 15273 | 15274 | 15275 | 15276 | 15277 | 15278 | >>
Nr.NumeDescriereProducator
610881KM432S2030CT-G102M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLSamsung Electronic
610882KM432S2030CT-G62M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLSamsung Electronic
610883KM432S2030CT-G72M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLSamsung Electronic
610884KM432S2030CT-G82M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTLSamsung Electronic
610885KM4470Low Cost, +2.7V & +5V, Rail-to-Rail I/O AmplifiersFairchild Semiconductor
610886KM4470IP14TR3Low Cost/ +2.7V & +5V/ Rail-to-Rail I/O AmplifiersFairchild Semiconductor
610887KM44C1000D1M x 4Bit CMOS Dynamic RAM with Fast Page ModeSamsung Electronic
610888KM44C1000DJ-51m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 50nsSamsung Electronic
610889KM44C1000DJ-61m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 60nsSamsung Electronic
610890KM44C1000DJ-71m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 70nsSamsung Electronic
610891KM44C1000DJL-51m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 50nsSamsung Electronic
610892KM44C1000DJL-61m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 60nsSamsung Electronic
610893KM44C1000DJL-71m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 70nsSamsung Electronic
610894KM44C1000DT-51m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 50nsSamsung Electronic
610895KM44C1000DT-61m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 60nsSamsung Electronic
610896KM44C1000DT-71m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 70nsSamsung Electronic
610897KM44C1000DTL-51m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 50nsSamsung Electronic
610898KM44C1000DTL-61m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 60nsSamsung Electronic
610899KM44C1000DTL-71m x 4 biți CMOS RAM dinamic cu modul rapid pagina, 5V, 70nsSamsung Electronic
610900KM44C256B-10100ns; V (cc / in / out): -1.0 la 7.0V; 600MW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610901KM44C256B-770ns; V (cc / in / out): -1.0 la 7.0V; 600MW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610902KM44C256B-880ns; V (cc / in / out): -1.0 la 7.0V; 600MW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610903KM44C256C-660ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610904KM44C256C-770ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610905KM44C256C-880ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610906KM44C256CL-660ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610907KM44C256CL-770ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610908KM44C256CL-880ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610909KM44C256CSL-660ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610910KM44C256CSL-770ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610911KM44C256CSL-880ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610912KM44C256D-660ns; V (cc / in / out): -1.0 la 7.0V; 385mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610913KM44C256D-760ns; V (cc / in / out): -1.0 la 7.0V; 358mW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610914KM44C256D-860ns; V (cc / in / out): -1.0 la 7.0V; 330MW; 50mA; 256K x 4-bit RAM CMOS dinamic cu Page moda FastSamsung Electronic
610915KM44C4000C4M x 4Bit CMOS Dynamic RAM with Fast Page ModeSamsung Electronic
610916KM44C4000CK-54M x 4 biți CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
610917KM44C4000CK-64M x 4 biți CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
610918KM44C4000CKL-54M x 4 biți CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
610919KM44C4000CKL-64M x 4 biți CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
610920KM44C4000CS-54M x 4 biți CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
Datasheet-uri gasite :: 1351360Pagina: << | 15268 | 15269 | 15270 | 15271 | 15272 | 15273 | 15274 | 15275 | 15276 | 15277 | 15278 | >>
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