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Datasheet-uri gasite :: 1351360Pagina: << | 15266 | 15267 | 15268 | 15269 | 15270 | 15271 | 15272 | 15273 | 15274 | 15275 | 15276 | >>
Nr.NumeDescriereProducator
610801KM418RD32C128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610802KM418RD32D128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610803KM418RD4AC128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610804KM418RD4AD128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610805KM418RD4C128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610806KM418RD4D128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610807KM418RD8AC128/144Mbit RDRAMSamsung Electronic
610808KM418RD8AC(D)-RG60128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610809KM418RD8AC(D)-RK70128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610810KM418RD8AC(D)-RK80128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610811KM418RD8AC-RG60256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 53.3 ns, viteză: 600 Mbps (300 MHz).Samsung Electronic
610812KM418RD8AC-RK70256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 45 ns, viteză: 711 Mbps (356 MHz).Samsung Electronic
610813KM418RD8AC-RK80256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 45 ns, viteză: 800 Mbps (400 MHz).Samsung Electronic
610814KM418RD8AD128/144Mbit RDRAMSamsung Electronic
610815KM418RD8AD-RG60256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 53.3 ns, viteză: 600 Mbps (300 MHz).Samsung Electronic
610816KM418RD8AD-RK70256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 45 ns, viteză: 711 Mbps (356 MHz).Samsung Electronic
610817KM418RD8AD-RK80256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 45 ns, viteză: 800 Mbps (400 MHz).Samsung Electronic
610818KM418RD8C128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610819KM418RD8D128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTMSamsung Electronic
610820KM41C4000D4M x 1Bit CMOS Dynamic RAM with Fast Page ModeSamsung Electronic
610821KM41C4000DJ-54M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 16 ms refresh, 50nsSamsung Electronic
610822KM41C4000DJ-64M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 16 ms refresh, 60nsSamsung Electronic
610823KM41C4000DJ-74M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 16 ms refresh, 70nsSamsung Electronic
610824KM41C4000DLJ-54M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 128ms reîmprospătare, 50nsSamsung Electronic
610825KM41C4000DLJ-64M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 128ms reîmprospătare, 60nsSamsung Electronic
610826KM41C4000DLJ-74M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 128ms reîmprospătare, 70nsSamsung Electronic
610827KM41C4000DLT-54M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 128ms reîmprospătare, 50nsSamsung Electronic
610828KM41C4000DLT-64M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 128ms reîmprospătare, 60nsSamsung Electronic
610829KM41C4000DLT-74M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 128ms reîmprospătare, 70nsSamsung Electronic
610830KM41C4000DT-54M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 16 ms refresh, 50nsSamsung Electronic
610831KM41C4000DT-64M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 16 ms refresh, 60nsSamsung Electronic
610832KM41C4000DT-74M x 1bit CMOS RAM dinamic cu modul de start, rapid, 5V, 16 ms refresh, 70nsSamsung Electronic
610833KM41V4000D4M x 1Bit CMOS Dynamic RAM with Fast Page ModeSamsung Electronic
610834KM41V4000DJ-64M x 1bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 16 ms reîmprospătare, 60nsSamsung Electronic
610835KM41V4000DJ-74M x 1bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 16 ms reîmprospătare, 70nsSamsung Electronic
610836KM41V4000DLJ-64M x 1bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 128ms reîmprospătare, 60nsSamsung Electronic
610837KM41V4000DLJ-74M x 1bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 128ms reîmprospătare, 70nsSamsung Electronic
610838KM41V4000DLT-64M x 1bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 128ms reîmprospătare, 60nsSamsung Electronic
610839KM41V4000DLT-74M x 1bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 128ms reîmprospătare, 70nsSamsung Electronic
610840KM41V4000DT-64M x 1bit CMOS RAM dinamic cu modul de start, rapid, 3.3V, 16 ms reîmprospătare, 60nsSamsung Electronic
Datasheet-uri gasite :: 1351360Pagina: << | 15266 | 15267 | 15268 | 15269 | 15270 | 15271 | 15272 | 15273 | 15274 | 15275 | 15276 | >>
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