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Datasheet-uri gasite :: 1351360Pagina: << | 22820 | 22821 | 22822 | 22823 | 22824 | 22825 | 22826 | 22827 | 22828 | 22829 | 22830 | >>
Nr.NumeDescriereProducator
912961MTP30P06VPower MOSFET 30 Amps, 60 VoltsON Semiconductor
912962MTP30P06V-DPower MOSFET 30 Amps, 60 Volts P-Channel TO-220ON Semiconductor
912963MTP30P06VGPower MOSFET 30 Amps, 60 VoltsON Semiconductor
912964MTP33N10TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHMMotorola
912965MTP33N10ETMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHMMotorola
912966MTP33N10ESPP Power NChannelON Semiconductor
912967MTP33N10E-DTMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
912968MTP36N06TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHMMotorola
912969MTP36N06VTMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHMMotorola
912970MTP36N06VPower MOSFET 32 Amps, 60 VoltsON Semiconductor
912971MTP36N06V-DPower MOSFET 32 Amps, 60 Volts N-Channel TO-220ON Semiconductor
912972MTP3N100N-canal TMOS putere FET. 1000 V, 3 A, Rds (on) 4 Ohm.Motorola
912973MTP3N100ETMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHMMotorola
912974MTP3N100E-DTMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
912975MTP3N120ETMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHMMotorola
912976MTP3N120E-DTMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
912977MTP3N25ETMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHMMotorola
912978MTP3N35N-Channel Power MOSFETs, 3.0 A, 350-400 VFairchild Semiconductor
912979MTP3N40N-Channel Power MOSFETs, 3.0 A, 350-400 VFairchild Semiconductor
912980MTP3N50TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMSMotorola
912981MTP3N50ETMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMSMotorola
912982MTP3N50E3 Amp TO-220AB, N-Channel, Vdss 500ON Semiconductor
912983MTP3N50E-DTMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon GateON Semiconductor
912984MTP3N60OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
912985MTP3N60N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS Thomson Microelectronics
912986MTP3N60OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
912987MTP3N60ETMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMSMotorola
912988MTP3N60E3 Amp TO-220AB, N-Channel, Vdss 600ON Semiconductor
912989MTP3N60E-DTMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon GateON Semiconductor
912990MTP3N60FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
912991MTP3N60FIN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS Thomson Microelectronics
912992MTP3N60FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
912993MTP40N10ETMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHMMotorola
912994MTP40N10EMOSFET de putere 40 amperi, 100 de voltiON Semiconductor
912995MTP40N10E-DPower MOSFET 40 Amps, 100 Volts N-Channel TO-220ON Semiconductor
912996MTP45N05ETMOS IV POWER FIELD EFFECT TRANSISTORSMotorola
912997MTP4N08N-Channel Power MOSFETs, 5.5 A, 60-100VFairchild Semiconductor
912998MTP4N10N-Channel Power MOSFETs, 5.5 A, 60-100VFairchild Semiconductor
912999MTP4N40ETMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHMMotorola
913000MTP4N40EOBSOLETE - 4 Amp TO-220AB, N-Channel, Vdss 400ON Semiconductor
Datasheet-uri gasite :: 1351360Pagina: << | 22820 | 22821 | 22822 | 22823 | 22824 | 22825 | 22826 | 22827 | 22828 | 22829 | 22830 | >>
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