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Datasheet-uri gasite :: 1351360Pagina: << | 22819 | 22820 | 22821 | 22822 | 22823 | 22824 | 22825 | 22826 | 22827 | 22828 | 22829 | >>
Nr.NumeDescriereProducator
912921MTP29N15E-DPower MOSFET 29 Amps, 150 Volts N-Channel TO-220ON Semiconductor
912922MTP2N20POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATEMotorola
912923MTP2N35N-Channel Power MOSFETs, 2.25A, 350-400VFairchild Semiconductor
912924MTP2N40N-Channel Power MOSFETs, 2.25A, 350-400VFairchild Semiconductor
912925MTP2N40ETMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHMMotorola
912926MTP2N40E2 Amp TO-220AB, N-Channel, Vdss 400ON Semiconductor
912927MTP2N40E-DTMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon GateON Semiconductor
912928MTP2N45N-Channel Power MOSFETs, 3.0 A, 450 V/500 VFairchild Semiconductor
912929MTP2N50N-Channel Power MOSFETs, 3.0 A, 450 V/500 VFairchild Semiconductor
912930MTP2N50ETMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHMMotorola
912931MTP2N60TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMSMotorola
912932MTP2N60ETMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMSMotorola
912933MTP2N60EN-Channel Enhancement-Mode Silicon GateON Semiconductor
912934MTP2N60E-DTMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon GateON Semiconductor
912935MTP2P50TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHMMotorola
912936MTP2P50ETMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHMMotorola
912937MTP2P50EPower MOSFET 2 Amps, 500 VoltsON Semiconductor
912938MTP2P50E-DPower MOSFET 2 Amps, 500 Volts P-Channel TO-220ON Semiconductor
912939MTP2P50EGPower MOSFET 2 Amps, 500 VoltsON Semiconductor
912940MTP3055TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMMotorola
912941MTP3055N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFETST Microelectronics
912942MTP3055EN-CHANNEL 60V - 0.1 OHM - 12A TO-220 STRIPFET POWER MOSFETST Microelectronics
912943MTP3055EN - CHANNEL 60V - 0.1Ohm - 12A TO-220 STripFET MOSFETSGS Thomson Microelectronics
912944MTP3055EN-canal TMOS putere FET. 60 V, 12 A, Rds (on) 0,15 Ohm.Motorola
912945MTP3055ELN-canal TMOS FET de putere la nivel logic. 60 V, 12 A, Rds (on) 0,18 Ohm.Motorola
912946MTP3055VN-Channel Enhancement Mode Field Effect TransistorFairchild Semiconductor
912947MTP3055VTMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMMotorola
912948MTP3055VTMOS Power FET 60V, 0.15OhmON Semiconductor
912949MTP3055V-DPower MOSFET 12 Amps, 60 Volts N-Channel TO-220ON Semiconductor
912950MTP3055VLTMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHMMotorola
912951MTP3055VL60V, SINGLE, TO-220, N-ChannelFairchild Semiconductor
912952MTP3055VLPower MOSFET 12 Amps, 60 Volts, Logic LevelON Semiconductor
912953MTP3055VLPower MOSFET 12 Amps, 60 Volts, Logic LevelON Semiconductor
912954MTP3055VL-DPower MOSFET 12 Amps, 60 Volts, Logic Level N-Channel TO-220ON Semiconductor
912955MTP30N06VLTMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHMMotorola
912956MTP30N06VLMOSFET de putere 30 Amperi, 60 de volti, Logic LevelON Semiconductor
912957MTP30N06VL-DPower MOSFET 30 Amps, 60 Volts, Logic Level N-Channel TO-220ON Semiconductor
912958MTP30N08MPOWER FIELD EFFECT TRANSISTORMotorola
912959MTP30P06TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHMMotorola
912960MTP30P06VTMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHMMotorola
Datasheet-uri gasite :: 1351360Pagina: << | 22819 | 22820 | 22821 | 22822 | 22823 | 22824 | 22825 | 22826 | 22827 | 22828 | 22829 | >>
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