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Datasheet-uri găsite :: 1675338
Pagina: << | 19313 | 19314 | 19315 | 19316 | 19317 | 19318 | 19319 | 19320 | 19321 | 19322 | 19323 | >>
Nr.NumeDescriereProducător
772681KM416V1204BJRAM DINAMIT CMOS 1M x 16BIT CU IEȘIRE DE DATE EXTINDERESamsung Electronic
772682KM416V1204BJ-53.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772683KM416V1204BJ-63.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772684KM416V1204BJ-73.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772685KM416V1204BJ-L53.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772686KM416V1204BJ-L63.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772687KM416V1204BJ-L73.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772688KM416V1204BT-53.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772689KM416V1204BT-63.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772690KM416V1204BT-73.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772691KM416V1204BT-L53.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772692KM416V1204BT-L63.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772693KM416V1204BT-L73.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772694KM416V1204CRAM dinamică CMOS 1M x 16Bit cu ieșire extinsă de dateSamsung Electronic
772695KM416V1204CJ-451m x 16bit CMOS RAM dinamic cu date extinse afară, 45ns, VCC = 3.3V, reîmprospătare perioadei = 16 msSamsung Electronic
772696KM416V1204CJ-53.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772697KM416V1204CJ-501m x 16bit CMOS RAM dinamic cu date extinse afară, 50ns, VCC = 3.3V, reîmprospătare perioadei = 16 msSamsung Electronic
772698KM416V1204CJ-63.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772699KM416V1204CJ-601m x 16bit CMOS RAM dinamic cu date extinse afară, 60ns, VCC = 3.3V, reîmprospătare perioadei = 16 msSamsung Electronic
772700KM416V1204CJ-L53.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772701KM416V1204CJ-L63.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772702KM416V1204CJL-451m x 16bit CMOS RAM dinamic cu date extinse out, 45ns, VCC = 3.3V, auto-refreshSamsung Electronic
772703KM416V1204CJL-501m x 16bit CMOS RAM dinamic cu date extinse out, 50ns, VCC = 3.3V, auto-refreshSamsung Electronic
772704KM416V1204CJL-601m x 16bit CMOS RAM dinamic cu date extinse out, 60ns, VCC = 3.3V, auto-refreshSamsung Electronic
772705KM416V1204CT-451m x 16bit CMOS RAM dinamic cu date extinse afară, 45ns, VCC = 3.3V, reîmprospătare perioadei = 16 msSamsung Electronic
772706KM416V1204CT-53.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772707KM416V1204CT-501m x 16bit CMOS RAM dinamic cu date extinse afară, 50ns, VCC = 3.3V, reîmprospătare perioadei = 16 msSamsung Electronic
772708KM416V1204CT-63.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772709KM416V1204CT-601m x 16bit CMOS RAM dinamic cu date extinse afară, 60ns, VCC = 3.3V, reîmprospătare perioadei = 16 msSamsung Electronic
772710KM416V1204CT-L53.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772711KM416V1204CT-L63.3V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772712KM416V1204CTL-451m x 16bit CMOS RAM dinamic cu date extinse out, 45ns, VCC = 3.3V, auto-refreshSamsung Electronic
772713KM416V1204CTL-501m x 16bit CMOS RAM dinamic cu date extinse out, 50ns, VCC = 3.3V, auto-refreshSamsung Electronic
772714KM416V1204CTL-601m x 16bit CMOS RAM dinamic cu date extinse out, 60ns, VCC = 3.3V, auto-refreshSamsung Electronic
772715KM416V254DRAM dinamic CMOS 256K x 16Bit cu ieșire extinsă de dateSamsung Electronic
772716KM416V254DJ-5256K x 16bit CMOS RAM dinamic cu date extinse afară, Vcc = 3.3V, 50ns, 8ms refresh perioadăSamsung Electronic
772717KM416V254DJ-6256K x 16bit CMOS RAM dinamic cu date extinse afară, Vcc = 3.3V, 60ns, 8ms refresh perioadăSamsung Electronic
772718KM416V254DJ-7256K x 16bit CMOS RAM dinamic cu date extinse afară, Vcc = 3.3V, 70ns, 8ms refresh perioadăSamsung Electronic
772719KM416V254DJL-5256K x 16bit CMOS RAM dinamic cu date extinse afară, Vcc = 3.3V, 50ns, de auto-refreshSamsung Electronic
772720KM416V254DJL-6256K x 16bit CMOS RAM dinamic cu date extinse afară, Vcc = 3.3V, 60ns, de auto-refreshSamsung Electronic
Datasheet-uri găsite :: 1675338
Pagina: << | 19313 | 19314 | 19315 | 19316 | 19317 | 19318 | 19319 | 19320 | 19321 | 19322 | 19323 | >>

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