| 1178321 | MTW7N80E-D | MOSFET de putere 7 Amperi, 800 Volți | ON Semiconductor |
| 1178322 | MTW8N50E | TMOS E FET TRANSISTOR DE EFECT DE CÂMP | Motorola |
| 1178323 | MTW8N60E | TMOS POWER FET 8,0 AMPERI 600 VOLȚI RDS (pornit) = 0,55 OHM | Motorola |
| 1178324 | MTW8N60E | TMOS POWER FET 8,0 AMPERI 600 VOLȚI RDS (pornit) = 0,55 OHM | ON Semiconductor |
| 1178325 | MTW8N60E-D | MOSFET de putere 8 Amperi, 600 N Volți N-Canal TO-247 | ON Semiconductor |
| 1178326 | MTW8N60E/D | TMOS POWER FET 8,0 AMPERI 600 VOLȚI RDS (pornit) = 0,55 OHM | Motorola |
| 1178327 | MTY100N10E | TMOS POWER FET 100 AMPERI 100 VOLȚI RDS (pornit) = 0,011 OHM | Motorola |
| 1178328 | MTY100N10E | MOSFET de putere 100 Amperi, 100 Volți | ON Semiconductor |
| 1178329 | MTY100N10E-D | MOSFET de putere 100 Amperi, 100 Volți | ON Semiconductor |
| 1178330 | MTY10N100E | TMOS POWER FET 10 AMPERI 1000 VOLȚI RDS (pornit) = 1,3 OHM | Motorola |
| 1178331 | MTY14N100 | TMOS POWER FET 14 AMPERI 1000 VOLȚI RDS (pornit) = 0,80 OHM | Motorola |
| 1178332 | MTY14N100E | TMOS POWER FET 14 AMPERI 1000 VOLȚI RDS (pornit) = 0,80 OHM | Motorola |
| 1178333 | MTY14N100E | N-Channel Enhancement-Mode Silicon Gate | ON Semiconductor |
| 1178334 | MTY14N100E-D | Tranzistor cu efect de câmp de putere TMOS E-FET Mod de îmbunătățire a canalului N Poartă din silicon | ON Semiconductor |
| 1178335 | MTY16N80E | TMOS POWER FET 16 AMPERI 800 VOLȚI RDS (pornit) = 0,50 OHM | Motorola |
| 1178336 | MTY16N80E | N-Channel Enhancement-Mode Silicon Gate | ON Semiconductor |
| 1178337 | MTY16N80E-D | Tranzistor cu efect de câmp de putere TMOS E-FET | ON Semiconductor |
| 1178338 | MTY20N50E | MOSFET de putere 20 amperi, 500 de volti | ON Semiconductor |
| 1178339 | MTY20N50E-D | MOSFET de putere 20 amperi, 500 de volti | ON Semiconductor |
| 1178340 | MTY25N60E | TMOS POWER FET 25 AMPERI 600 VOLȚI RDS (pornit) = 0,21 OHM | Motorola |
| 1178341 | MTY25N60E | INVECHITE - MOSFET de putere 25 amperi, 600 de volti | ON Semiconductor |
| 1178342 | MTY25N60E-D | Putere MOSFET 25 Amperi, 600 Volți | ON Semiconductor |
| 1178343 | MTY30N50 | TMOS POWER FET 30 AMPERI 500 VOLTS RDS (pornit) = 0,15 OHM | Motorola |
| 1178344 | MTY30N50E | TMOS POWER FET 30 AMPERI 500 VOLTS RDS (pornit) = 0,15 OHM | Motorola |
| 1178345 | MTY30N50E | INVECHITE - MOSFET de putere 30 amperi, 500 de volti | ON Semiconductor |
| 1178346 | MTY30N50E-D | Putere MOSFET 30 Amperi, 500 Volți N-Channel TO-264 | ON Semiconductor |
| 1178347 | MTY55N20E | TMOS POWER FET 55 AMPERI 200 VOLȚI RDS (pornit) = 0,028 OHM | Motorola |
| 1178348 | MTY55N20E | INVECHITE - MOSFET de putere 55 amperi, 200 de volti | ON Semiconductor |
| 1178349 | MTY55N20E-D | Putere MOSFET 55 Amperi, 200 volți canal N TO-264 | ON Semiconductor |
| 1178350 | MTZ J | Diode> Zener Diodes (Include TVS)> 2 Terminale (single) Zener Diodes | ROHM |
| 1178351 | MTZJ | DIODE ZENER SERIA MTZJ | Leshan Radio Company |
| 1178352 | MTZJ | DIODE ZENER SERIA MTZJ | ROHM |
| 1178353 | MTZJ10 | Mini diodă Zenor de 500 mW | ROHM |
| 1178354 | MTZJ10A | DIODE ZENER | Micro Commercial Components |
| 1178355 | MTZJ10A | Dispozitive discrete-Diode-Zener Diode & Array | Taiwan Semiconductor |
| 1178356 | MTZJ10B | DIODE ZENER | Micro Commercial Components |
| 1178357 | MTZJ10B | Dispozitive discrete-Diode-Zener Diode & Array | Taiwan Semiconductor |
| 1178358 | MTZJ10C | DIODE ZENER | Micro Commercial Components |
| 1178359 | MTZJ10C | Dispozitive discrete-Diode-Zener Diode & Array | Taiwan Semiconductor |
| 1178360 | MTZJ10D | DIODE ZENER | Micro Commercial Components |
