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Datasheet-uri gasite :: 1351360Pagina: << | 23212 | 23213 | 23214 | 23215 | 23216 | 23217 | 23218 | 23219 | 23220 | 23221 | 23222 | >>
Nr.NumeDescriereProducator
928641NE65003793W L / S-BAND POWER GaAs MESFETNEC
928642NE6500379A3W L, S-BAND POWER GaAs MESFETNEC
928643NE6500379A-T13W L, S-BAND POWER GaAs MESFETNEC
928644NE65004964 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FETNEC
928645NE650103MNECS 10 W L & S-BAND POWER GaAs MESFETCalifornia Eastern Laboratories
928646NE650103MNECS 10 W L & S-BAND POWER GaAs MESFETCalifornia Eastern Laboratories
928647NE650103M10 W, L & S-band GaAs MESFET putere.NEC
928648NE650107710 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FETNEC
928649NE650R279A0.2 W L, S-BAND POWER GaAs MES FETNEC
928650NE650R279A-T10.2 W L, S-BAND POWER GaAs MES FETNEC
928651NE650R479A0.4 W L, S-BAND POWER GaAs MES FETNEC
928652NE650R479A-T10.4 W L, S-BAND POWER GaAs MES FETNEC
928653NE65101791 W L-BAND POWER GaAs HJ-FETNEC
928654NE6510179A1 W L-BAND POWER GaAs HJ-FETNEC
928655NE6510179A-T11 W L-BAND POWER GaAs HJ-FETNEC
928656NE6510379A3 W L-BAND POWER GaAs HJ-FETNEC
928657NE6510379A-T13 W L-BAND POWER GaAs HJ-FETNEC
928658NE651R479A0.4 W L-BAND POWER GaAs HJ-FETNEC
928659NE651R479A-T10.4 W L-BAND POWER GaAs HJ-FETNEC
928660NE661M04NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDNEC
928661NE661M04-T2NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDNEC
928662NE662M04NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928663NE662M04NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928664NE662M04-T2NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928665NE662M04-T2NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928666NE662M16NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928667NE662M16-T3NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928668NE663M04-T2NPN siliciu de înaltă frecvență tranzistor.NEC
928669NE664M04MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928670NE664M04MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928671NE664M04-T2MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928672NE664M04-T2MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTORNEC
928673NE66719-T1NPN siliciu de înaltă frecvență tranzistor.NEC
928674NE67400L pentru banda Ku amplificator de zgomot redus N-canal GaAs MESFET. IDSS 20 și 120 mA.NEC
928675NE67483BL pentru banda Ku amplificator de zgomot redus N-canal GaAs MESFET. IDSS 20 și 120 mA.NEC
928676NE677M04NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTORCalifornia Eastern Laboratories
928677NE677M04NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTORCalifornia Eastern Laboratories
928678NE677M04-T2NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTORCalifornia Eastern Laboratories
928679NE677M04-T2NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTORCalifornia Eastern Laboratories
928680NE677M04-T2Putere medie de siliciu NPN tranzistor de înaltă frecvență.NEC
Datasheet-uri gasite :: 1351360Pagina: << | 23212 | 23213 | 23214 | 23215 | 23216 | 23217 | 23218 | 23219 | 23220 | 23221 | 23222 | >>
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