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Datasheet-uri gasite :: 1351360Pagina: << | 22829 | 22830 | 22831 | 22832 | 22833 | 22834 | 22835 | 22836 | 22837 | 22838 | 22839 | >>
Nr.NumeDescriereProducator
913321MTW16N40E-DPower MOSFET 16 Amps, 400 Volts N-Channel TO-247ON Semiconductor
913322MTW20N50ETMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHMMotorola
913323MTW20N50EINVECHITE - MOSFET de putere 20 amperi, 500 de voltiON Semiconductor
913324MTW20N50E-DPower MOSFET 20 Amps, 500 Volts N-Channel TO-247ON Semiconductor
913325MTW23N25ETMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHMMotorola
913326MTW24N40ETMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHMMotorola
913327MTW24N40EINVECHITE - MOSFET de putere 24 amperi, 400 de voltiON Semiconductor
913328MTW24N40E-DPower MOSFET 24 Amps, 400 Volts N-Channel TO-247ON Semiconductor
913329MTW26N15ETMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHMMotorola
913330MTW32N20ETMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHMMotorola
913331MTW32N20EPower MOSFET 32 Amps, 200 VoltsON Semiconductor
913332MTW32N20E-DPower MOSFET 32 Amps, 200 Volts N-Channel TO-247ON Semiconductor
913333MTW32N25TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHMMotorola
913334MTW32N25ETMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHMMotorola
913335MTW32N25EMOSFET de putere 32 amperi, 250 de voltiON Semiconductor
913336MTW32N25E-DPower MOSFET 32 Amps, 250 Volts N-Channel TO-247ON Semiconductor
913337MTW33N10ETMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHMMotorola
913338MTW35N15ETMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHMMotorola
913339MTW35N15EINVECHITE - MOSFET de putere 35 amperi, 150 de voltiON Semiconductor
913340MTW35N15E-DPower MOSFET 35 Amps, 150 Volts N-Channel TO-247ON Semiconductor
913341MTW45N10TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHMMotorola
913342MTW45N10ETMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHMMotorola
913343MTW45N10E-DPower MOSFET 45 Amps, 100 VoltsON Semiconductor
913344MTW4N80TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATEMotorola
913345MTW4N80ETMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATEMotorola
913346MTW54N05EHigh Energy in the Avalanche and Commutation modesMotorola
913347MTW6N100TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHMMotorola
913348MTW6N100ETMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHMMotorola
913349MTW6N100EMOSFET de putere 6 amperi, 1000 de volțiON Semiconductor
913350MTW6N100E-DPower MOSFET 6 Amps, 1000 VoltsON Semiconductor
913351MTW6N60EPower Field Effect Transistor N-Channel Enhancement-Mode Silicon GateMotorola
913352MTW7N80ETMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHMMotorola
913353MTW7N80EINVECHITE - MOSFET de putere 7 amperi, 800 de voltiON Semiconductor
913354MTW7N80E-DPower MOSFET 7 Amps, 800 VoltsON Semiconductor
913355MTW8N50ETMOS E FET POWER FIELD EFFECT TRANSISTORMotorola
913356MTW8N60ETMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHMMotorola
913357MTW8N60ETMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHMON Semiconductor
913358MTW8N60E-DPower MOSFET 8 Amps, 600 Volts N-Channel TO-247ON Semiconductor
913359MTW8N60E/DTMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHMMotorola
913360MTY100N10ETMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHMMotorola
Datasheet-uri gasite :: 1351360Pagina: << | 22829 | 22830 | 22831 | 22832 | 22833 | 22834 | 22835 | 22836 | 22837 | 22838 | 22839 | >>
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