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Datasheet-uri gasite :: 1351360Pagina: << | 22041 | 22042 | 22043 | 22044 | 22045 | 22046 | 22047 | 22048 | 22049 | 22050 | 22051 | >>
Nr.NumeDescriereProducator
881801MJE172Power 3A 80V PNPON Semiconductor
881802MJE17212.500W medie de putere PNP Transistor Plastic plumb. 80V Vceo, 3.000A Ic, 50-250 hFE.Continental Device India Limited
881803MJE172-100 V, -1 A, PNP epitaxial de siliciu tranzistorSamsung Electronic
881804MJE172STUPNP Epitaxial Silicon TransistorFairchild Semiconductor
881805MJE180NPN Epitaxial Silicon TransistorFairchild Semiconductor
881806MJE180POWER TRANSISTORS(3.0A,40-80V,12.5W)MOSPEC Semiconductor
881807MJE180Leaded Power Transistor General PurposeCentral Semiconductor
881808MJE18012.500W medie de putere NPN Transistor de plastic cu plumb. 40V Vceo, 3.000A Ic, 50-250 hFE.Continental Device India Limited
881809MJE18060 V, 3 A, NPN epitaxial de siliciu tranzistorSamsung Electronic
881810MJE18002POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTSMotorola
881811MJE18002Switchmode™ON Semiconductor
881812MJE18002-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
881813MJE18002D2POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTSMotorola
881814MJE18002D2De mare viteză, High Gain Bipolar NPN tranzistor de putere cu integrat colector-emițător Diode și Built-In eficientă Antisaturation de rețeaON Semiconductor
881815MJE18002D2-DHigh Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTSON Semiconductor
881816MJE18004POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTSMotorola
881817MJE18004Switchmode™ON Semiconductor
881818MJE18004Switchmode™ON Semiconductor
881819MJE18004-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
881820MJE18004D2POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTSMotorola
881821MJE18004D2High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...ON Semiconductor
881822MJE18004D2High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...ON Semiconductor
881823MJE18004D2-DHigh Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTSON Semiconductor
881824MJE18006POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTSMotorola
881825MJE18006Power 8A 450V NPNON Semiconductor
881826MJE18006-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
881827MJE18008POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTSMotorola
881828MJE18008SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
881829MJE18008-DSWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply ApplicationsON Semiconductor
881830MJE18009POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTSMotorola
881831MJE18009-DSWITCHMODE NPN Silicon Planar Power TransistorON Semiconductor
881832MJE180STUNPN Epitaxial Silicon TransistorFairchild Semiconductor
881833MJE181NPN Epitaxial Silicon TransistorFairchild Semiconductor
881834MJE181POWER TRANSISTORS(3.0A,40-80V,12.5W)MOSPEC Semiconductor
881835MJE1813 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTSMotorola
881836MJE181Leaded Power Transistor General PurposeCentral Semiconductor
881837MJE181Power 3A 60V NPNON Semiconductor
881838MJE18112.500W medie de putere NPN Transistor de plastic cu plumb. 60V Vceo, 3.000A Ic, 50-250 hFE.Continental Device India Limited
881839MJE18160 V, 3 A, NPN epitaxial de siliciu tranzistorSamsung Electronic
881840MJE181STUNPN Epitaxial Silicon TransistorFairchild Semiconductor
Datasheet-uri gasite :: 1351360Pagina: << | 22041 | 22042 | 22043 | 22044 | 22045 | 22046 | 22047 | 22048 | 22049 | 22050 | 22051 | >>
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