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Datasheet-uri gasite :: 1351360Pagina: << | 20578 | 20579 | 20580 | 20581 | 20582 | 20583 | 20584 | 20585 | 20586 | 20587 | 20588 | >>
Nr.NumeDescriereProducator
823281MGSF3454VT1-DLow Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect TransistorsON Semiconductor
823282MGSF3454VT3Low RDS (on) de semnal mic tmos MOSFET singur N-canal efect de câmp tranzistorMotorola
823283MGSF3454XT1N-CHANNEL ENHANCEMENT-MODE TMOS MOSFETMotorola
823284MGSF3454XT1Un singur MOSFET N-ChannelON Semiconductor
823285MGSF3454XT1-DLow Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect TransistorsON Semiconductor
823286MGSF3454XT3Low RDS (on) de semnal mic tmos MOSFET singur N-canal efect de câmp tranzistorMotorola
823287MGSF3455VT1P-CHANNEL ENHANCEMENT-MODE TMOS MOSFETMotorola
823288MGSF3455VT1-DLow Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect TransistorsON Semiconductor
823289MGSF3455VT3Low RDS (on) de semnal mic tmos MOSFET singur N-canal efect de câmp tranzistorMotorola
823290MGSF3455XT1P-CHANNEL ENHANCEMENT-MODE TMOS MOSFETMotorola
823291MGSF3455XT1Un singur MOSFET P-ChannelON Semiconductor
823292MGSF3455XT1-DLow Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect TransistorsON Semiconductor
823293MGSF3455XT3Low RDS (on) de semnal mic tmos MOSFET singur N-canal efect de câmp tranzistorMotorola
823294MGTO1000Gate turn-off thyristor / Repetitive peak off-state voltage 1000 V / 18 A RMSMotorola
823295MGTO1200GATE TURN OFF THYRISTORSMotorola
823296MGV12N120DInsulated Gate Bipolar Transistor with Anti-Parallel DiodeMotorola
823297MGW12N120Insulated Gate Bipolar TransistorMotorola
823298MGW12N120Insulated Gate Bipolar Transistor N-canalON Semiconductor
823299MGW12N120-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823300MGW12N120DInsulated Gate Bipolar Transistor with Anti-Parallel DiodeMotorola
823301MGW12N120DInsulated Gate Bipolar Transistor cu Anti-paralel diode N-canalON Semiconductor
823302MGW12N120D-DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon GateON Semiconductor
823303MGW14N60EDInsulated Gate Bipolar TransistorON Semiconductor
823304MGW14N60ED-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823305MGW20N120Insulated Gate Bipolar TransistorMotorola
823306MGW20N120OBSOLETE - Insulated Gate Bipolar Transistor N-ChannelON Semiconductor
823307MGW20N120-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823308MGW20N60DInsulated Gate Bipolar Transistor with Anti-Parallel DiodeMotorola
823309MGW21N60EDInsulated Gate Bipolar TransistorMotorola
823310MGW21N60ED-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823311MGW30N60Insulated Gate Bipolar TransistorMotorola
823312MGY20N120DInsulated Gate Bipolar Transistor with Anti-Parallel DiodeMotorola
823313MGY20N120DInsulated Gate Bipolar Transistor cu Anti-paralel diode N-canalON Semiconductor
823314MGY20N120D-DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon GateON Semiconductor
823315MGY25N120Insulated Gate Bipolar TransistorMotorola
823316MGY25N120Insulated Gate Bipolar Transistor N-canalON Semiconductor
823317MGY25N120-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823318MGY25N120DInsulated Gate Bipolar Transistor with Anti-Parallel DiodeMotorola
823319MGY25N120DInsulated Gate Bipolar Transistor cu Anti-paralel diode N-canalON Semiconductor
823320MGY25N120D-DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon GateON Semiconductor
Datasheet-uri gasite :: 1351360Pagina: << | 20578 | 20579 | 20580 | 20581 | 20582 | 20583 | 20584 | 20585 | 20586 | 20587 | 20588 | >>
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