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Datasheet-uri gasite :: 1351360Pagina: << | 20575 | 20576 | 20577 | 20578 | 20579 | 20580 | 20581 | 20582 | 20583 | 20584 | 20585 | >>
Nr.NumeDescriereProducator
823161MGFS48B21222.11 - 2.17 GHz BAND 60W GaAs FETMitsubishi Electric Corporation
823162MGFS48V25272.7 - 2.5 GHz BAND 60W GaAs FETMitsubishi Electric Corporation
823163MGFX36V071710.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FETMitsubishi Electric Corporation
823164MGFX39V071710.7-11.7GHz Band 8W Internally MATCHD GaAs FETMitsubishi Electric Corporation
823165MGLM111Negativ tensiunea de alimentare: -30V; tensiunea de alimentare pozitivă: + 30V; numărul total de tensiunea de alimentare: 36V; comparator de tensiune.National Semiconductor
823166MGM3000XVideo Modulator for FM/AM-AudioSiemens
823167MGP11N60EInsulated Gate Bipolar TransistorMotorola
823168MGP11N60E-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823169MGP11N60EDSHORT CIRCUIT RATED LOW ON-VOLTAGEON Semiconductor
823170MGP11N60ED-DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon GateON Semiconductor
823171MGP14N60EInsulated Gate Bipolar TransistorMotorola
823172MGP14N60E-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823173MGP15N35CLIgnition IGBT 15 Amps, 350 VoltsON Semiconductor
823174MGP15N35CL-DIgnition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAKON Semiconductor
823175MGP15N38CLInternally Clamped N-Channel IGBTON Semiconductor
823176MGP15N38CL-DIgnition IGBT 15 Amps, 380 Volts N-Channel TO-220 and D2PAKON Semiconductor
823177MGP15N40CLIgnition IGBT 15 Amps, 410 VoltsON Semiconductor
823178MGP15N40CL-DIgnition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAKON Semiconductor
823179MGP15N43CLInternally Clamped N-Channel IGBTON Semiconductor
823180MGP15N43CL-DIgnition IGBT 15 Amps, 430 Volts N-Channel TO-220 and D2PAKON Semiconductor
823181MGP15N60UInsulated Gate Bipolar TransistorMotorola
823182MGP15N60U-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823183MGP19N35CLIgnition IGBT 19 Amps, 350 VoltsON Semiconductor
823184MGP19N35CL-DIgnition IGBT 19 Amps, 350 Volts N-Channel TO-220 and D2PAKON Semiconductor
823185MGP20N14CLInternally Clamped, N-Channel IGBTMotorola
823186MGP20N14CL-DSMARTDISCRETES Internally Clamped, N-Channel IGBTON Semiconductor
823187MGP20N35CLSMARTDISCRETES Internally Clamped, N-Channel IGBTMotorola
823188MGP20N35CL-DSMARTDISCRETES Internally Clamped, N-Channel IGBTON Semiconductor
823189MGP20N40CLSMARTDISCRETES Internally Clamped, N-Channel IGBTMotorola
823190MGP20N40CL-DSMARTDISCRETES Internally Clamped, N-Channel IGBTON Semiconductor
823191MGP20N60UInsulated Gate Bipolar TransistorMotorola
823192MGP20N60U-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823193MGP21N60EInsulated Gate Bipolar TransistorMotorola
823194MGP21N60E-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823195MGP3006GHz PLL with I2C Bus and Four Chip AddressesSiemens
823196MGP3006XGHz PLL with I2C Bus and Four Chip AddressesSiemens
823197MGP3006X6GHz PLL with I2C Bus and Four Chip AddressesSiemens
823198MGP4N60EInsulated Gate Bipolar TransistorMotorola
823199MGP4N60E-DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon GateON Semiconductor
823200MGP4N60EDInsulated Gate Bipolar Transistor with Anti-Parallel DiodeON Semiconductor
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