|   Prima pagină   |   Producători   |   După Funcție   |  
EN FR DE ES IT PT RU

   
Salt rapid: 1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148 AD590


Datasheet-uri găsite :: 1675338
Pagina: << | 19306 | 19307 | 19308 | 19309 | 19310 | 19311 | 19312 | 19313 | 19314 | 19315 | 19316 | >>
Nr.NumeDescriereProducător
772401KM416C1200CJL-51m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
772402KM416C1200CJL-61m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
772403KM416C1200CT-51m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
772404KM416C1200CT-61m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
772405KM416C1200CTL-51m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 50nsSamsung Electronic
772406KM416C1200CTL-61m x 16bit CMOS RAM dinamic cu modul de start, rapid, 5V, 60nsSamsung Electronic
772407KM416C1204BJ-455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772408KM416C1204BJ-55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772409KM416C1204BJ-65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772410KM416C1204BJ-75V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772411KM416C1204BJ-L455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772412KM416C1204BJ-L55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772413KM416C1204BJ-L65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772414KM416C1204BJ-L75V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772415KM416C1204BT-455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772416KM416C1204BT-55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772417KM416C1204BT-65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772418KM416C1204BT-75V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772419KM416C1204BT-L455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772420KM416C1204BT-L55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772421KM416C1204BT-L65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772422KM416C1204BT-L75V, 1m x 16 bit CMOS DRAM cu date extinse out, 70nsSamsung Electronic
772423KM416C1204CRAM dinamică CMOS 1M x 16Bit cu ieșire extinsă de dateSamsung Electronic
772424KM416C1204CJ-451m x 16bit CMOS RAM dinamic cu date extinse afară, 45ns, VCC = 5.0V, reîmprospătare perioadei = 16 msSamsung Electronic
772425KM416C1204CJ-55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772426KM416C1204CJ-501m x 16bit CMOS RAM dinamic cu date extinse afară, 50ns, VCC = 5.0V, reîmprospătare perioadei = 16 msSamsung Electronic
772427KM416C1204CJ-65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772428KM416C1204CJ-601m x 16bit CMOS RAM dinamic cu date extinse afară, 60ns, VCC = 5.0V, reîmprospătare perioadei = 16 msSamsung Electronic
772429KM416C1204CJ-L455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772430KM416C1204CJ-L55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772431KM416C1204CJ-L65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772432KM416C1204CJL-451m x 16bit CMOS RAM dinamic cu date extinse out, 45ns, VCC = 5.0V, auto-refreshSamsung Electronic
772433KM416C1204CJL-501m x 16bit CMOS RAM dinamic cu date extinse out, 50ns, VCC = 5.0V, auto-refreshSamsung Electronic
772434KM416C1204CJL-601m x 16bit CMOS RAM dinamic cu date extinse out, 60ns, VCC = 5.0V, auto-refreshSamsung Electronic
772435KM416C1204CT-455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
772436KM416C1204CT-55V, 1m x 16 bit CMOS DRAM cu date extinse out, 50nsSamsung Electronic
772437KM416C1204CT-501m x 16bit CMOS RAM dinamic cu date extinse afară, 50ns, VCC = 5.0V, reîmprospătare perioadei = 16 msSamsung Electronic
772438KM416C1204CT-65V, 1m x 16 bit CMOS DRAM cu date extinse out, 60nsSamsung Electronic
772439KM416C1204CT-601m x 16bit CMOS RAM dinamic cu date extinse afară, 60ns, VCC = 5.0V, reîmprospătare perioadei = 16 msSamsung Electronic
772440KM416C1204CT-L455V, 1m x 16 bit CMOS DRAM cu date extinse out, 45nsSamsung Electronic
Datasheet-uri găsite :: 1675338
Pagina: << | 19306 | 19307 | 19308 | 19309 | 19310 | 19311 | 19312 | 19313 | 19314 | 19315 | 19316 | >>

View this page in english


© 2023    www.datasheetcatalog.com