| 760361 | K4R441869A | RDRAM direct | Samsung Electronic |
| 760362 | K4R441869A-N(M) | K4R271669A-N (M): RDRAM direct ?? Fișa cu date | Samsung Electronic |
| 760363 | K4R441869A-N(M)CG6 | 256K x 16/18 bit x 2 * 16 Banci dependente Direct RDRAM ™ | Samsung Electronic |
| 760364 | K4R441869A-N(M)CK7 | 256K x 16/18 bit x 2 * 16 Banci dependente Direct RDRAM ™ | Samsung Electronic |
| 760365 | K4R441869A-N(M)CK8 | 256K x 16/18 bit x 2 * 16 Banci dependente Direct RDRAM ™ | Samsung Electronic |
| 760366 | K4R441869AM-CG6 | 256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 53.3 ns, I / O de frecvențe. 600 de MHz. | Samsung Electronic |
| 760367 | K4R441869AM-CK7 | 256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 45 ns, I / O de frecvențe. 711 MHz. | Samsung Electronic |
| 760368 | K4R441869AM-CK8 | 256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 45 ns, I / O de frecvențe. 800 de MHz. | Samsung Electronic |
| 760369 | K4R441869AN-CG6 | 256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 53.3 ns, I / O de frecvențe. 600 de MHz. | Samsung Electronic |
| 760370 | K4R441869AN-CK7 | 256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 45 ns, I / O de frecvențe. 711 MHz. | Samsung Electronic |
| 760371 | K4R441869AN-CK8 | 256K x 18 x 32s bănci dependente RDRAM directă. Timp de acces: 45 ns, I / O de frecvențe. 800 de MHz. | Samsung Electronic |
| 760372 | K4R441869B | RDRAM direct | Samsung Electronic |
| 760373 | K4R441869B | K4R271669B: Fișă tehnică directă RDRAM ™ | Samsung Electronic |
| 760374 | K4R441869B-N(M)CG6 | 256K x 16/18 bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760375 | K4R441869B-N(M)CK7 | 256K x 16/18 bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760376 | K4R441869B-N(M)CK8 | 256K x 16/18 bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760377 | K4R521669A | 250 la 0.13V; 512 / 576Mbit scurt canal non-stop RDRAM 1066MHz (A-die); 1M x 16 / 18bit x 32s Bănci | Samsung Electronic |
| 760378 | K4R57(88)16(8)69A | Fișă tehnică directă RDRAM ™ | Samsung Electronic |
| 760379 | K4R571669D | 256 / 288Mbit RDRAM (D-die) | Samsung Electronic |
| 760380 | K4R571669M | Fișă tehnică directă RDRAM ™ | Samsung Electronic |
| 760381 | K4R761869A | 250 la 0.13V; 512 / 576Mbit scurt canal non-stop RDRAM 1066MHz (A-die); 1M x 16 / 18bit x 32s Bănci | Samsung Electronic |
| 760382 | K4R761869A-F | 576Mbit RDRAM (A-die) 1M x 18bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760383 | K4R761869A-FBCCN1 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760384 | K4R761869A-FCM8 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760385 | K4R761869A-FCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760386 | K4R761869A-GCM8 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760387 | K4R761869A-GCN1 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760388 | K4R761869A-GCT9 | 576Mbit RDRAM (A-die) 1M x 18bit x 32s bancuri Direct RDRAM ™ | Samsung Electronic |
| 760389 | K4R881869 | RDRAM 288Mbit 512K x 18 biți x 2 * 16 Bănci dependente Direct RDRAM ™ | Samsung Electronic |
| 760390 | K4R881869D | 256 / 288Mbit RDRAM (D-die) | Samsung Electronic |
| 760391 | K4R881869M | Fișă tehnică directă RDRAM ™ | Samsung Electronic |
| 760392 | K4R881869M | RDRAM direct | Samsung Electronic |
| 760393 | K4R881869M-NBCCG6 | RDRAM 288Mbit 512K x 18 biți x 2 * 16 Bănci dependente Direct RDRAM ™ | Samsung Electronic |
| 760394 | K4R881869M-NCK7 | RDRAM 288Mbit 512K x 18 biți x 2 * 16 Bănci dependente Direct RDRAM ™ | Samsung Electronic |
| 760395 | K4R881869M-NCK8 | RDRAM 288Mbit 512K x 18 biți x 2 * 16 Bănci dependente Direct RDRAM ™ | Samsung Electronic |
| 760396 | K4S160822D | 1M x 8bit x 2 Bănci Sincron DRAM LVTTL | Samsung Electronic |
| 760397 | K4S160822DT-G/F10 | 2Mx8 SDRAM 1M x 8bit x 2 Bănci Sincron DRAM LVTTL | Samsung Electronic |
| 760398 | K4S160822DT-G/F7 | 2Mx8 SDRAM 1M x 8bit x 2 Bănci Sincron DRAM LVTTL | Samsung Electronic |
| 760399 | K4S160822DT-G/F8 | 2Mx8 SDRAM 1M x 8bit x 2 Bănci Sincron DRAM LVTTL | Samsung Electronic |
| 760400 | K4S160822DT-G/FH | 2Mx8 SDRAM 1M x 8bit x 2 Bănci Sincron DRAM LVTTL | Samsung Electronic |
