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Datasheet-uri gasite :: 1351360Pagina: << | 14194 | 14195 | 14196 | 14197 | 14198 | 14199 | 14200 | 14201 | 14202 | 14203 | 14204 | >>
Nr.NumeDescriereProducator
567921IRF50050W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
567922IRF500C10RJ50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
567923IRF500C10RJ50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
567924IRF5105.6A, 100V, 0.540 Ohm, N-Channel Power MOSFETFairchild Semiconductor
567925IRF510100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567926IRF510N-Channel Enhancement-Mode Vertical DMOS Power FETsSupertex Inc
567927IRF5105.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFETIntersil
567928IRF510N-canal de alimentare accesoriu-mode cu efect de câmp tranzistor. Drain-sourge tensiune de 100V. Curent de scurgere continuu (la Tc 25deg) 4.0A.General Electric Solid State
567929IRF510Putere MOSFET N-canal, 100V, 5.6aHarris Semiconductor
567930IRF510-513N-Channel Power MOSFETs/ 5.5 A/ 60-100VFairchild Semiconductor
567931IRF510AN-CHANNEL POWER MOSFETFairchild Semiconductor
567932IRF510S100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567933IRF510STRL100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567934IRF510STRR100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567935IRF511N-Channel Enhancement-Mode Vertical DMOS Power FETsSupertex Inc
567936IRF511N-Channel Power MOSFETs/ 5.5 A/ 60-100VFairchild Semiconductor
567937IRF511N-canal de alimentare accesoriu-mode cu efect de câmp tranzistor. Scurgeti-sourge tensiune 60V. Curent de scurgere continuu (la Tc 25deg) 4.0A.General Electric Solid State
567938IRF511Putere MOSFET N-canal, 80V, 5.6aHarris Semiconductor
567939IRF512N-Channel Enhancement-Mode Vertical DMOS Power FETsSupertex Inc
567940IRF512N-Channel Power MOSFETs/ 5.5 A/ 60-100VFairchild Semiconductor
567941IRF512N-canal de alimentare accesoriu-mode cu efect de câmp tranzistor. Drain-sourge tensiune de 100V. Curent de scurgere continuu (la Tc 25deg) 3.5A.General Electric Solid State
567942IRF512Putere MOSFET N-canal, 100V, 4.9AHarris Semiconductor
567943IRF513N-Channel Enhancement-Mode Vertical DMOS Power FETsSupertex Inc
567944IRF513N-Channel Power MOSFETs/ 5.5 A/ 60-100VFairchild Semiconductor
567945IRF513N-canal de alimentare accesoriu-mode cu efect de câmp tranzistor. Scurgeti-sourge tensiune 60V. Curent de scurgere continuu (la Tc 25deg) 3.5A.General Electric Solid State
567946IRF513Putere MOSFET N-canal, 80V, 4.9AHarris Semiconductor
567947IRF5209.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET FeaturesFairchild Semiconductor
567948IRF520N-CHANNEL 100V - 0.115 OHM - 10A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFETST Microelectronics
567949IRF520100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567950IRF520N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS Thomson Microelectronics
567951IRF520N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS Thomson Microelectronics
567952IRF520N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETsSupertex Inc
567953IRF5209.2A/ 100V/ 0.270 Ohm/ N-Channel Power MOSFETIntersil
567954IRF520AN-CHANNEL POWER MOSFETFairchild Semiconductor
567955IRF520FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS Thomson Microelectronics
567956IRF520FIN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS Thomson Microelectronics
567957IRF520FIN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSST Microelectronics
567958IRF520LPower MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A)International Rectifier
567959IRF520N100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567960IRF520NLHEXFET MOSFET de putere. Vdss = 100V, RDS (on) = 0,20 Ohm, ID = 9.7aInternational Rectifier
Datasheet-uri gasite :: 1351360Pagina: << | 14194 | 14195 | 14196 | 14197 | 14198 | 14199 | 14200 | 14201 | 14202 | 14203 | 14204 | >>
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