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Datasheet-uri gasite :: 1351360Pagina: << | 14185 | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | 14195 | >>
Nr.NumeDescriereProducator
567561IRF230-233N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
567562IRF231N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
567563IRF2318.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
567564IRF231N-CHANNEL POWER MOSFETSSamsung Electronic
567565IRF231N-canal de alimentare accesoriu-mode cu efect de câmp tranzistor. Drain-sourge tensiune 150V. Curent de scurgere continuu (la Tc 25deg) 9.0A.General Electric Solid State
567566IRF232N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
567567IRF2328.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
567568IRF232N-CHANNEL POWER MOSFETSSamsung Electronic
567569IRF232N-canal de alimentare accesoriu-mode cu efect de câmp tranzistor. Drain-sourge tensiune 200V. Curent de scurgere continuu (la Tc 25deg) 8.0A.General Electric Solid State
567570IRF233N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
567571IRF2338.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
567572IRF233N-CHANNEL POWER MOSFETSSamsung Electronic
567573IRF233N-canal de alimentare accesoriu-mode cu efect de câmp tranzistor. Drain-sourge tensiune 150V. Curent de scurgere continuu (la Tc 25deg) 8.0A.General Electric Solid State
567574IRF2348.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
567575IRF2358.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
567576IRF2368.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
567577IRF2378.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
567578IRF240200V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
567579IRF240N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONSSemeLAB
567580IRF240N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567581IRF24018A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETIntersil
567582IRF240N-CHANNEL POWER MOSFETSamsung Electronic
567583IRF240-243N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567584IRF240SMDN.CHANNEL POWER MOSFETSemeLAB
567585IRF241N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567586IRF241N-CHANNEL POWER MOSFETSamsung Electronic
567587IRF241N-canal de alimentare accesoriu-mode cu efect de câmp tranzistor. Drain-sourge tensiune 150V. Curent de scurgere continuu (la Tc 25deg) 18A.General Electric Solid State
567588IRF24116A și 18A, 200V și 150V, 0,18 și 0,22 Ohm, N-canal de alimentare MOSFETIntersil
567589IRF242N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567590IRF242N-CHANNEL POWER MOSFETSamsung Electronic
567591IRF24216A și 18A, 200V și 150V, 0,18 și 0,22 Ohm, N-canal de alimentare MOSFETIntersil
567592IRF243N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567593IRF243N-CHANNEL POWER MOSFETSamsung Electronic
567594IRF243N-canal de alimentare accesoriu-mode cu efect de câmp tranzistor. Drain-sourge tensiune 150V. Curent de scurgere continuu (la Tc 25deg) 16A.General Electric Solid State
567595IRF24316A și 18A, 200V și 150V, 0,18 și 0,22 Ohm, N-canal de alimentare MOSFETIntersil
567596IRF24414A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
567597IRF24514A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
567598IRF24614A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
567599IRF24714A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
567600IRF250200V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
Datasheet-uri gasite :: 1351360Pagina: << | 14185 | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | 14195 | >>
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