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Datasheet-uri gasite :: 1351360Pagina: << | 1354 | 1355 | 1356 | 1357 | 1358 | 1359 | 1360 | 1361 | 1362 | 1363 | 1364 | >>
Nr.NumeDescriereProducator
543212SC3552Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)Wing Shing Computer Components
543222SC3553Silicon NPN TransistorHitachi Semiconductor
543232SC3553Silicon NPN EpitaxialHitachi Semiconductor
543242SC3554NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDNEC
543252SC3554-T1Silicon transistorNEC
543262SC3554-T2Silicon transistorNEC
543272SC35593A; 30W; V (CEO): 800V; NPN tranzistor. Pentru comutarea regulamentTOSHIBA
543282SC35602A; 20W; V (CEO): 400V; NPN tranzistor. Pentru comutarea regulamentTOSHIBA
543292SC35612A; 20W; V (CEO): 400V; NPN tranzistor. Pentru comutarea regulamentTOSHIBA
543302SC356210A; 40W; V (CEO): 400V; NPN tranzistor. Pentru comutarea regulamentTOSHIBA
543312SC356310A; 40W; V (CEO): 450V; NPN tranzistor. Pentru comutarea regulamentTOSHIBA
543322SC3567NPN SILICON POWER TRANSISTORNEC
543332SC3568NPN SILICON POWER TRANSISTORNEC
543342SC3569Silicon transistorNEC
543352SC3571NPN SILICON POWER TRANSISTORNEC
543362SC3572NPN SILICON POWER TRANSISTORNEC
543372SC3572NPN SILICON POWER TRANSISTORNEC
543382SC3572NPN SILICON POWER TRANSISTORNEC
543392SC3576NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsSANYO
543402SC3580900MW Plumb tranzistor NPN cadru, viteză maximă: 20V Vceo, 700mA Ic, 150-800 hFE. 2SA1398 complementareIsahaya Electronics Corporation
543412SC3581900MW Plumb tranzistor NPN cadru, viteză maximă: 50V Vceo, 400mA Ic, 9-50 hFE. 2SA1399 complementareIsahaya Electronics Corporation
543422SC3582MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORNEC
543432SC3582-TPentru cuptor cu microunde amplifica și zgomot redus.NEC
543442SC3583MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORNEC
543452SC3583-LPentru cuptor cu microunde amplifica și zgomot redus.NEC
543462SC3583-T1BPentru cuptor cu microunde amplifica și zgomot redus.NEC
543472SC3583-T2BPentru cuptor cu microunde amplifica și zgomot redus.NEC
543482SC3585MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISORNEC
543492SC3585-LPentru cuptor cu microunde amplifica și zgomot redus.NEC
543502SC3585-T1BPentru cuptor cu microunde amplifica și zgomot redus.NEC
543512SC3585-T2BPentru cuptor cu microunde amplifica și zgomot redus.NEC
543522SC3587NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATIONNEC
543532SC3588NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3NEC
543542SC3588-ZNPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3NEC
543552SC3591High-Definition CRT Display Horizontal Deflection Output ApplicationsSANYO
543562SC3595NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output ApplicationsSANYO
543572SC3596NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output ApplicationsSANYO
543582SC3597NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output ApplicationsSANYO
543592SC3598NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output ApplicationsSANYO
543602SC3599NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output ApplicationsSANYO
Datasheet-uri gasite :: 1351360Pagina: << | 1354 | 1355 | 1356 | 1357 | 1358 | 1359 | 1360 | 1361 | 1362 | 1363 | 1364 | >>
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