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Datasheet-uri gasite :: 1351360Pagina: << | 1291 | 1292 | 1293 | 1294 | 1295 | 1296 | 1297 | 1298 | 1299 | 1300 | 1301 | >>
Nr.NumeDescriereProducator
518012SB1085TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINEROHM
518022SB1085AEpitaxial Planar PNP Silicon TransistorROHM
518032SB1085ATAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINEROHM
518042SB1091Silicon PNP Darlington TransistorHitachi Semiconductor
518052SB1091Silicon PNP Triple DiffusedHitachi Semiconductor
518062SB1091Transistors>Switching/BipolarRenesas
518072SB1093PNP SILICON DARLINGTON TRANSISTORNEC
518082SB1094Silicon transistorNEC
518092SB1096Color TV Vertical Deflection OutputUnknow
518102SB1101LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602Hitachi Semiconductor
518112SB1102LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602Hitachi Semiconductor
518122SB1103Silicon PNP Darlington TransistorHitachi Semiconductor
518132SB1103Silicon PNP Triple DiffusedHitachi Semiconductor
518142SB1103Transistors>Switching/BipolarRenesas
518152SB1108Medium Speed Switching Complementary Pair with 2SD1608Panasonic
518162SB1109SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)Hitachi Semiconductor
518172SB1110SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)Hitachi Semiconductor
518182SB1114Silicon transistorNEC
518192SB1114-T1Silicon transistorNEC
518202SB1114-T2Silicon transistorNEC
518212SB1115PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDNEC
518222SB111560 V, 2 A, 2 W tranzistor de siliciuEIC discrete Semiconductors
518232SB1115-T1Silicon transistorNEC
518242SB1115-T2Silicon transistorNEC
518252SB1115APNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDNEC
518262SB1115A80 V, 2 A, 2 W tranzistor de siliciuEIC discrete Semiconductors
518272SB1115A-T1Silicon transistorNEC
518282SB1115A-T2Silicon transistorNEC
518292SB1116Silicon transistorNEC
518302SB1116Putere audio amplificator de frecvență de comutare de viteză medie. Tensiune colector-bază: Vcbo = -60V. Tensiune colector-emițător: Vceo = -50V. Tensiune emitor-bază VEBO = -6V. Disipare colector: Pc (max) = 0,75W.USHA India LTD
518312SB1116(C)-TSilicon transistorNEC
518322SB1116-TSilicon transistorNEC
518332SB1116-T/JDSilicon transistorNEC
518342SB1116-T/JMSilicon transistorNEC
518352SB1116/JDSilicon transistorNEC
518362SB1116/JMSilicon transistorNEC
518372SB1116ASilicon transistorNEC
518382SB1116APutere audio amplificator de frecvență de comutare de viteză medie. Tensiune colector-bază Vcbo = -80V. Tensiune colector-emițător Vceo = -60V. Tensiune emitor-bază VEBO = -6V. Disipare colector PC (max) = 0,75W.USHA India LTD
518392SB1116A-TSilicon transistorNEC
518402SB1116A-T/JDSilicon transistorNEC
Datasheet-uri gasite :: 1351360Pagina: << | 1291 | 1292 | 1293 | 1294 | 1295 | 1296 | 1297 | 1298 | 1299 | 1300 | 1301 | >>
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