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Datasheet-uri gasite :: 1351360Pagina: << | 1204 | 1205 | 1206 | 1207 | 1208 | 1209 | 1210 | 1211 | 1212 | 1213 | 1214 | >>
Nr.NumeDescriereProducator
483212N6080V (CBO): 36V; V (CEO): 18V; V (EBO): 4V; Tranzistor de comunicații VHFSGS Thomson Microelectronics
483222N6081RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483232N6081RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483242N6081V (CBO): 36V; V (CEO): 18V; V (EBO): 4V; Tranzistor de comunicații VHFSGS Thomson Microelectronics
483252N6082NPN Silicon RF Power TransistorsMotorola
483262N6082VHF Communications TransistorST Microelectronics
483272N6082V (CBO): 36V; V (CEO): 18V; V (EBO): 4V; Tranzistor de comunicații VHFSGS Thomson Microelectronics
483282N6083RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483292N6083RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483302N6083V (CBO): 36V; V (CEO): 18V; V (EBO): 4V; Tranzistor de comunicații VHFSGS Thomson Microelectronics
483312N6084RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483322N6084RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONSMicrosemi
483332N6084V (CBO): 36V; V (CEO): 18V; V (EBO): 4V; Tranzistor de comunicații VHFSGS Thomson Microelectronics
483342N6099Leaded Power Transistor General PurposeCentral Semiconductor
483352N6101Leaded Power Transistor General PurposeCentral Semiconductor
483362N610175.000W medie de putere NPN Transistor de plastic cu plumb. 70V Vceo, 10.000A Ic, 20-80 hFE.Continental Device India Limited
483372N6103Leaded Power Transistor General PurposeCentral Semiconductor
483382N6106EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483392N6106Epitaxial-bază, siliciu PNP VERSAWATT tranzistor. -80V.General Electric Solid State
483402N6107SILICON PNP SWITCHING TRANSISTORSST Microelectronics
483412N6107SILICON PNP SWITCHING TRANSISTORSSGS Thomson Microelectronics
483422N6107SILICON PNP SWITCHING TRANSISTORSSGS Thomson Microelectronics
483432N6107POWER TRANSISTORS(7A,40W)MOSPEC Semiconductor
483442N6107EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483452N6107Leaded Power Transistor General PurposeCentral Semiconductor
483462N6107Power 7A 70V Discrete PNPON Semiconductor
483472N610740.000W medie de putere PNP Transistor Plastic plumb. 70V Vceo, 7.000A Ic, 2 hFE.Continental Device India Limited
483482N6107Epitaxial-bază, siliciu PNP VERSAWATT tranzistor. -80V.General Electric Solid State
483492N6107PNP plastic siliciu putere tranzistor. Conceput pentru utilizare în comutare și de amplificare aplicații de uz general. Vceo = 70Vdc, VCB = 80Vdc, Veb = 5VDC Ic = 7Adc, PD = 40W.USHA India LTD
483502N6107-DComplementary Silicon Plastic Power TransistorsON Semiconductor
483512N6108EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483522N6108Epitaxial-bază, siliciu PNP VERSAWATT tranzistor. -60V.General Electric Solid State
483532N6109POWER TRANSISTORS(7A,40W)MOSPEC Semiconductor
483542N6109EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483552N6109Leaded Power Transistor General PurposeCentral Semiconductor
483562N6109Power 7A 50V Discrete PNPON Semiconductor
483572N610940.000W medie de putere PNP Transistor Plastic plumb. 50V Vceo, 7.000A Ic, 30-150 hFE.Continental Device India Limited
483582N6109Epitaxial-bază, siliciu PNP VERSAWATT tranzistor. -60V.General Electric Solid State
483592N6110EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSBoca Semiconductor Corporation
483602N6110Epitaxial-bază, siliciu PNP VERSAWATT tranzistor. -40V.General Electric Solid State
Datasheet-uri gasite :: 1351360Pagina: << | 1204 | 1205 | 1206 | 1207 | 1208 | 1209 | 1210 | 1211 | 1212 | 1213 | 1214 | >>
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