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Datasheet-uri gasite :: 1351360Pagina: << | 1148 | 1149 | 1150 | 1151 | 1152 | 1153 | 1154 | 1155 | 1156 | 1157 | 1158 | >>
Nr.NumeDescriereProducator
460812N4104Bipolar NPN DeviceSemeLAB
460822N4104Bipolar NPN DeviceSemeLAB
460832N4113Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
460842N4113Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
460852N4114Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
460862N4117N-Channel JFET General Purpose AmplifierCalogic
460872N4117N-canal joncțiune de silicon cu efect de câmp tranzistorInterFET Corporation
460882N4117Impedanță ultra-înaltă de intrare N-channel JFETLinear Systems
460892N4117AUltra Low Leakage, N-Channel JFETsVishay
460902N4117AN-Channel JFET General Purpose AmplifierCalogic
460912N4117AUltra High Input Impedance N-Channel JFET AmplifierLinear Systems
460922N4117AN-canal joncțiune de silicon cu efect de câmp tranzistorInterFET Corporation
460932N4118N-Channel JFET General Purpose AmplifierCalogic
460942N4118ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFETLinear Systems
460952N4118N-canal joncțiune de silicon cu efect de câmp tranzistorInterFET Corporation
460962N4118AUltra Low Leakage, N-Channel JFETsVishay
460972N4118AN-Channel JFET General Purpose AmplifierCalogic
460982N4118AUltra High Input Impedance N-Channel JFET AmplifierLinear Systems
460992N4118AN-canal joncțiune de silicon cu efect de câmp tranzistorInterFET Corporation
461002N4119N-Channel JFET General Purpose AmplifierCalogic
461012N4119ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFETLinear Systems
461022N4119N-canal joncțiune de silicon cu efect de câmp tranzistorInterFET Corporation
461032N4119AUltra Low Leakage, N-Channel JFETsVishay
461042N4119AN-Channel JFET General Purpose AmplifierCalogic
461052N4119AUltra High Input Impedance N-Channel JFET AmplifierLinear Systems
461062N4119AN-canal joncțiune de silicon cu efect de câmp tranzistorInterFET Corporation
461072N4123NPN General Purpose AmplifierFairchild Semiconductor
461082N4123NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
461092N4123NPN Silicon General Purpose Transistor 625mWMicro Commercial Components
461102N4123Leaded Small Signal Transistor General PurposeCentral Semiconductor
461112N4123General Purpose Transistors(NPN Silicon)ON Semiconductor
461122N4123NPN EPITAXIAL SILICON TRANSISTORSamsung Electronic
461132N4123Planar epitaxial pasivizat NPN tranzistor de siliciu. 30V, 200mA.General Electric Solid State
461142N4123Ic = 200mA, VCE = tranzistor 1.0VMCC
461152N4123Tranzistor de uz general. Tensiune colector-emițător: 30V = Vceo. Tensiune colector-bază: 40V = VCBO. Disipare colector: Pc (max) = 625mW.USHA India LTD
461162N4123-DGeneral Purpose Transistors NPN SiliconON Semiconductor
461172N4123BUNPN General Purpose AmplifierFairchild Semiconductor
461182N4123RLRAGeneral Purpose Transistor - NPNON Semiconductor
461192N4123RLRMGeneral Purpose Transistor - NPNON Semiconductor
461202N4123TANPN General Purpose AmplifierFairchild Semiconductor
Datasheet-uri gasite :: 1351360Pagina: << | 1148 | 1149 | 1150 | 1151 | 1152 | 1153 | 1154 | 1155 | 1156 | 1157 | 1158 | >>
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