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Datasheet-uri gasite :: 1351360Pagina: << | 7910 | 7911 | 7912 | 7913 | 7914 | 7915 | 7916 | 7917 | 7918 | 7919 | 7920 | >>
Nr.NumeDescriereProducator
316561CM75E3U-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316562CM75E3U-24HChopper IGBTMOD 75 Amperes/1200 VoltsPowerex Power Semiconductors
316563CM75TF-12HIGBT Modules: 600VMitsubishi Electric Corporation
316564CM75TF-12HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316565CM75TF-12HSix-IGBT IGBTMOD 75 Amperes/600 VoltsPowerex Power Semiconductors
316566CM75TF-24HIGBT Modules:1200VMitsubishi Electric Corporation
316567CM75TF-24HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316568CM75TF-24HSix-IGBT IGBTMOD 75 Amperes/1200 VoltsPowerex Power Semiconductors
316569CM75TF-28HIGBT Modules:1400VMitsubishi Electric Corporation
316570CM75TF-28HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316571CM75TF-28HSix-IGBT IGBTMOD 75 Amperes/1400 VoltsPowerex Power Semiconductors
316572CM75TJ-24FTrench Gate Design Six IGBTMOD¢â 75 Amperes/1200 VoltsPowerex Power Semiconductors
316573CM75TU-12FIGBT Modules: 600VMitsubishi Electric Corporation
316574CM75TU-12FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USEMitsubishi Electric Corporation
316575CM75TU-12FTrench Gate Design Six IGBTMOD¢â 75 Amperes/600 VoltsPowerex Power Semiconductors
316576CM75TU-12HIGBT Modules: 600VMitsubishi Electric Corporation
316577CM75TU-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316578CM75TU-12HSix IGBTMOD 75 Amperes/600 VoltsPowerex Power Semiconductors
316579CM75TU-24FIGBT Modules:1200VMitsubishi Electric Corporation
316580CM75TU-24FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USEMitsubishi Electric Corporation
316581CM75TU-24FTrench Gate Design Six IGBTMOD¢â 75 Amperes/1200 VoltsPowerex Power Semiconductors
316582CM75TU-24HIGBT Modules:1200VMitsubishi Electric Corporation
316583CM75TU-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316584CM75TU-24HSix IGBTMOD 75 Amperes/1200 VoltsPowerex Power Semiconductors
316585CM75TU-34KAIGBT Modules:1700VMitsubishi Electric Corporation
316586CM75TU-34KASix IGBTMOD 75 Amperes/1700 VoltsPowerex Power Semiconductors
316587CM800DU-12HDual IGBTMOD 800 Amperes/600 VoltsPowerex Power Semiconductors
316588CM800DZ-34HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
316589CM800DZ-34HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
316590CM800E2Z-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
316591CM800HA-24HIGBT Modules:1200VMitsubishi Electric Corporation
316592CM800HA-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316593CM800HA-24HSingle IGBTMOD 800 Amperes/1200 VoltsPowerex Power Semiconductors
316594CM800HA-28HSingle IGBTMOD 800 Amperes/1400 VoltsPowerex Power Semiconductors
316595CM800HA-34HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
316596CM800HA-34HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
316597CM800HA-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
316598CM800HA-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
316599CM800HB-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
316600CM800HB-50HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
Datasheet-uri gasite :: 1351360Pagina: << | 7910 | 7911 | 7912 | 7913 | 7914 | 7915 | 7916 | 7917 | 7918 | 7919 | 7920 | >>
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