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Datasheet-uri gasite :: 1351360Pagina: << | 6346 | 6347 | 6348 | 6349 | 6350 | 6351 | 6352 | 6353 | 6354 | 6355 | 6356 | >>
Nr.NumeDescriereProducator
254001BCR199PNP Silicon Digital TransistorInfineon
254002BCR199FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
254003BCR199FE6327Digital Transistors - R1= 47 kOhm ; R2= - kOhmInfineon
254004BCR199L3PNP Silicon Digital TransistorInfineon
254005BCR199L3E6327Digital Transistors - R1= 47 kOhmInfineon
254006BCR199TSingle digital (complex) AF-Transistors in SC75 packageInfineon
254007BCR199TE6327Digital Transistors - R1= 47 kOhmInfineon
254008BCR19PNDigital Transistors - SOT363 packageInfineon
254009BCR1AMLead-Mount Triac 1 Ampere/400-600 VoltsPowerex Power Semiconductors
254010BCR1AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
254011BCR1AM-12MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPEMitsubishi Electric Corporation
254012BCR1AM-12Lead-Mount Triac 1 Ampere/400-600 VoltsPowerex Power Semiconductors
254013BCR1AM-8MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
254014BCR1AM-8Lead-Mount Triac 1 Ampere/400-600 VoltsPowerex Power Semiconductors
254015BCR20AMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USEMitsubishi Electric Corporation
254016BCR20AMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
254017BCR20AMTriac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
254018BCR20AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
254019BCR20AM-12Triac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
254020BCR20AM-12LTriac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
254021BCR20AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
254022BCR20AM-8Triac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
254023BCR20AM-8LTriac 20 Ampere/400-600 VoltsPowerex Power Semiconductors
254024BCR20BMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USEMitsubishi Electric Corporation
254025BCR20B-10Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
254026BCR20B-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
254027BCR20CMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USEMitsubishi Electric Corporation
254028BCR20C-10Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
254029BCR20C-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
254030BCR20EMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USEMitsubishi Electric Corporation
254031BCR20KMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
254032BCR22NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)Siemens
254033BCR22PNNPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)Siemens
254034BCR22PNDual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50VInfineon
254035BCR22PNE6327Digital Transistors - SOT363 packageInfineon
254036BCR25AMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
254037BCR25BMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
254038BCR2PMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
254039BCR2PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
254040BCR2PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
Datasheet-uri gasite :: 1351360Pagina: << | 6346 | 6347 | 6348 | 6349 | 6350 | 6351 | 6352 | 6353 | 6354 | 6355 | 6356 | >>
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